Thermodynamic effect of alloying addition on in-situ reinforced TiB²/Al compositesTONGXIANG FAN; GUANG YANG; DI ZHANG et al.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 2005, Vol 36, Num 1, pp 225-233, issn 1073-5623, 9 p.Article

A study of indium activation in silicon using pseudopotential calculationsYAN, X; SHISHKIN, M; DE SOUZA, M. M et al.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 1, 283-286Conference Paper

Effect of deformation on the precipitates in Al-Mg₂Si alloys containing silicon in excessMATSUDA, K; SHIMIZU, S; GAMADA, H et al.Zairyo. 1999, Vol 48, Num 1, pp 10-15, issn 0514-5163Article

Microstructure Refinement After the Addition of Titanium Particles in AZ31 Magnesium Alloy Resistance Spot WeldsXIAO, L; LIU, L; ESMAEILI, S et al.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 2012, Vol 43, Num 2, pp 598-609, issn 1073-5623, 12 p.Article

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Grösseneinflüsse bei schwingbeanspruchten Schweissverbindungen = Size effects in fatigue of welded jointsHAIBACH, E; SEEGER, T.Materialwissenschaft und Werkstofftechnik. 1998, Vol 29, Num 4, pp 199-205, issn 0933-5137Article

Boron removal by titanium addition in solidification refining of silicon with Si-Al meltYOSHIKAWA, Takeshi; ARIMURA, Kentaro; MORITA, Kazuki et al.Metallurgical and materials transactions. B, Process metallurgy and materials processing science. 2005, Vol 36, Num 6, pp 837-842, issn 1073-5615, 6 p.Article

The effect of indium impurity on the DC-etching behaviour of aluminum foil for electrolytic capacitor usageLIN, W; TU, G. C; LIN, C. F et al.Corrosion science. 1997, Vol 39, Num 9, pp 1531-1543, issn 0010-938XArticle

Effects of internal air cooling in cast-in inserts of steel pipes in ductile cast ironNOGUCHI, T; CHIBA, M; KURA, K et al.Chuzo kogaku. 1997, Vol 69, Num 1, pp 35-40, issn 1342-0429Article

Evidence of dissolution-redeposition mechanism in activation of aluminium by indiumVENUGOPAL, A; RAJA, V. S.British Corrosion Journal. 1996, Vol 31, Num 4, pp 318-320, issn 0007-0599Article

The effect of additives in tin oxide on the sensitivity and selectivity to NO_x and COSAYAGO, I; GUTIERREZ, J; ARES, L et al.Sensors and actuators. B, Chemical. 1995, Vol 26, Num 1-3, pp 19-23, issn 0925-4005Conference Paper

A new extractive-spectrophotometric method for the determination of indium(III) in nickel-base alloys and zinc-base alloys = nouvelle méthode spectrophotométrique avec extraction pour le dosage de l'indium(III) dans les alliages à base de nickel et à base de zincANJANEYULU, Y; KAVIPURAPU, C. S; REDDY, M. R. P et al.Analusis (Imprimé). 1987, Vol 15, Num 2, pp 106-109, issn 0365-4877Article

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Enhanced age hardening response by the addition of Zn in Mg-Sn alloysSASAKI, T. T; OH-ISHI, K; OHKUBO, T et al.Scripta materialia. 2006, Vol 55, Num 3, pp 251-254, issn 1359-6462, 4 p.Article

Synthesis and electrochemical properties of Indium doped spinel LiMn₂O₄LIU, H. W; FENG, C. Q; TANG, H et al.Journal of materials science. Materials in electronics. 2004, Vol 15, Num 8, pp 495-497, issn 0957-4522, 3 p.Article

Optical time-to-space converterBOFFI, P; PIETRALUNGA, S; MARTINELLI, M et al.Optics communications. 1996, Vol 123, Num 4-6, pp 473-476, issn 0030-4018Article

NO_x tin dioxide sensors activities, as a function of doped materials and temperatureGUTIERREZ, F. J; ARES, L; ROBLA, J. I et al.Sensors and actuators. B, Chemical. 1993, Vol 16, Num 1-3, pp 354-356, issn 0925-4005Conference Paper

Organic solar cells incorporating buffer layers from indium doped zinc oxide nanoparticlesPUETZ, Andreas; STUBHAN, Tobias; REINHARD, Manuel et al.Solar energy materials and solar cells. 2011, Vol 95, Num 2, pp 579-585, issn 0927-0248, 7 p.Article

Aging Characteristics of Sn-Ag Eutectic Solder Alloy with the Addition of Cu, In, and MnGHOSH, M; KAR, Abhijit; DAS, S. K et al.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 2009, Vol 40, Num 10, pp 2369-2376, issn 1073-5623, 8 p.Article

Charge state control and relaxation in an atomically doped silicon deviceANDRESEN, Soren E. S; BRENNER, Rolf; WELLARD, Cameron J et al.Nano letters (Print). 2007, Vol 7, Num 7, pp 2000-2003, issn 1530-6984, 4 p.Article

Optoelectronic properties n:CdS:In/p-Si heterojunction photodetectorAL-ANI, Salwan K. J; ISMAIL, Raid A; AL-TA'AY, Hana F. A et al.Journal of materials science. Materials in electronics. 2006, Vol 17, Num 10, pp 819-824, issn 0957-4522, 6 p.Article

Molecular dynamics simulations of grain size stabilization in nanocrystalline materials by addition of dopantsMILLETT, Paul C; SELVAM, R. Panneer; SAXENA, Ashok et al.Acta materialia. 2006, Vol 54, Num 2, pp 297-303, issn 1359-6454, 7 p.Article

Ni, In and Sb implanted Pt and V catalysed thin-film SnO₂ gas sensorsSULZ, G; KÜHNER, G; REITER, H et al.Sensors and actuators. B, Chemical. 1993, Vol 16, Num 1-3, pp 390-395, issn 0925-4005Conference Paper

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Reduction of Inclusions in (CdZn)Te and CdTe:ln Single Crystals by Post-Growth AnnealingBELAS, E; BUGAR, M; GRILL, R et al.Journal of electronic materials. 2008, Vol 37, Num 9, pp 1212-1218, issn 0361-5235, 7 p.Conference Paper